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short channel

英 [ʃɔːt ˈtʃænl]

美 [ʃɔːrt ˈtʃænl]

网络  短通道; 短沟道

计算机

双语例句

  • This kind device can effectively suppress short channel effects for the scaling down of conventional MOSFETs, avoiding the serious effect of the steps of ion implantation and annealing at high temperature on the conventional SiC MOSFET.
    该结构能有效地抑制在器件尺寸大幅度降低时困扰常规MOSFET的短沟效应,避免了离子注入和高温退火工艺对SiC常规MOSFET性能的严重影响。
  • The research results indicate that with the increase of the concave corner, the negative junction depth and the doping density of channel, the hot carrier effect immunity is enhanced; the threshold voltage increases and the short channel effect is suppressed.
    研究发现,随着凹槽拐角、负结深的增大和沟道杂质浓度的提高,器件的抗热载流子能力增强,阈值电压升高,对短沟道效应的抑制作用增强。
  • Hot carrier effects in fluorinated short channel MOSFET have been investigated.
    研究了用注F工艺制作的短沟MOSFET的热载流子效应。
  • This paper discussed the electrical characteristic of short channel MOST at very high temperature.
    本文以短沟道MOST电学参数的温度特性为研究对象,对高温短沟道MOST的电学特性进行了深入的探讨。
  • Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model.
    本文从yau的模型出发,推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系:并考虑短沟道MOSFET的扩散电流。
  • Schottky source and drain junctions are a promising structure to minimize the MOSFET short channel effect.
    采用Schottky结源漏结构是克服传统MOSFET器件短沟效应的一种有效方法。
  • The Temperature Dependence of Threshold Voltage and Transconductance in Short Channel MOS Devices
    短沟道MOS器件阈电压和跨导的温度关系
  • To a certain extent in reducing the size, MOSFET will reach the physical limits, and severe short channel effects and gate leakage current will appear.
    在缩小到一定程度将达到它的物理极限,严重的短沟道效应和栅极泄漏电流将会出现。
  • This paper focuses on the chip in the actual design of some specific problems encountered, such as a more accurate static timing analysis, clock crosstalk, power distribution, and substrate leakage, short channel effects and so on.
    这里主要讨论在实际设计芯片中所遇到的一些具体问题,诸如更准确的静态时序分析,时钟串扰,电源分布,以及衬底漏电,短沟道效应等。
  • Two-Dimensional Short Channel Mosfet Steady State and Substrate Current Simulation
    二维短沟道MOSFET直流稳态与衬底电流的数值模拟